BSI Manuals

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Manuals

24

Models

3

Last added

2012-06-12

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Latest BSI manuals

• BSI BS616LV1611 DATA SHEET

  The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.

• BSI BS616L1011 DATA SHEET

  Very Low Power/Voltage CMOS SRAM 64K x 16 bit product features a wide Vcc operation voltage range (2.4 V to 5.5 V), very low power consumption, high speed access time and automatic power down function.

• BSI BS62LV4006 Data Sheet

  The BS62LV4006 is a high performance, low power CMOS static random access memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) , and active LOW output enable (OE) and three-state output drivers. The BS62LV4006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV4006 is available in the JEDEC standard 32L SOP, TSOP , PDIP, TSOP II and STSOP package.

• BSI BS616LV2019 Data Sheet

  This datasheet provides features and characteristics of BS616LV2019, including operating voltage range, power consumption, access time, etc.

• BSI BS616L1615 DATA SHEET

  The BS616LV1615 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 15uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1615 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1615 is available in 48-pin BGA package.

• BSI BS62UV2006 Data Sheet

  This document describes a high-performance, ultra-low power CMOS Static Random Access Memory called BS62UV2006, which features wide voltage operation range, ultra-low power consumption, high-speed access time, and automatic power down.

• BSI BS62UV1027 Manual

  The BS62UV1027 is a high-performance, ultra-low power CMOS Static Random Access Memory with a wide range of operating voltages and high-speed access time. The product features an automatic power down function, which significantly reduces power consumption when the chip is deselected.

• BSI BS62LV2006 Manual

  BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV2006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2006 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 16mmx16mm TSSOP packages.

• BSI BS62LV1029 Very Low Power/Voltage CMOS SRAM 128K X 8 bit handbook

  BS62LV1029 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.

• BSI BS62LV1027 Very Low Power/Voltage CMOS SRAM 128K X 8 bit handbook

• BSI BS62LV1023 DATA SHEET

  The BS62LV1023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage.

• BSI BS62LV2008 Very Low Power/Voltage CMOS SRAM 256K X 8 bit

  R0201-BS62LV2008 Revision 1.1 Jan. 2004 1 A17 is a very low power/voltage CMOS SRAM with a capacity of 256K x 8 bits. The features of this product include an operating voltage range of 4.5V to 5.5V, very low power consumption, and high-speed access time. It also has features such as automatic power down, three-state outputs, and TTL compatibility.

• BSI BS616LV1611 Very Low Power/Voltage CMOS SRAM 1M X 16 bit

  The BS616LV1611 is a high-performance, very low power CMOS static random access memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.

• BSI BS616LV2013 Data Sheet

  BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2013 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package.

• BSI BS62UV2006 Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

  The product is a 256K x 8 bit ultra low power/voltage CMOS SRAM with a wide voltage range, ultra low power consumption, high speed read/write, automatic power down function, three-state output, TTL compatibility, and full static operation.