BSI Manuals

The BS616LV8016 is a 512K x 16-bit low-power CMOS SRAM. It features a 2.4V ~ 5.5V wide power range, 0.8uA typical standby current, 55ns maximum access time, and an automatic power down feature.

BH62UV8001 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV8001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV8001 is available in DICE form and 48-ball BGA package.

The BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory with a wide range of operating voltage and high speed access time. It utilizes advanced CMOS technology and circuit techniques to provide high speed and low power features.

BS62LV1600 is a low-power CMOS SRAM from Fujitsu. It operates from a wide range of 2.4V to 5.5V supply voltage, with typical standby current of 1.5uA and maximum access time of 55ns.

BS616LV4017 is a high performance, low power 256Kx16-bit CMOS static random access memory. This device has 16 address lines and 16 data lines, supports 55ns and 70ns access time, can work at the power supply voltage of 2.4V~5.5V, and the working temperature range is -40℃~+85℃.

The BS616LV1622 is a high-performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1622 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.

This file introduces the characteristics of BS616LV2017 128K X 16 bit memory, including operating voltage, operating current, access time, etc.

The product is a 256K x 8 bit ultra low power/voltage CMOS SRAM with a wide voltage range, ultra low power consumption, high speed read/write, automatic power down function, three-state output, TTL compatibility, and full static operation.

BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2013 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package.

The BS616LV1611 is a high-performance, very low power CMOS static random access memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.

R0201-BS62LV2008 Revision 1.1 Jan. 2004 1 A17 is a very low power/voltage CMOS SRAM with a capacity of 256K x 8 bits. The features of this product include an operating voltage range of 4.5V to 5.5V, very low power consumption, and high-speed access time. It also has features such as automatic power down, three-state outputs, and TTL compatibility.

The BS62LV1023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage.