The BS62UV1027 is a high-performance, ultra-low power CMOS Static Random Access Memory with a wide range of operating voltages and high-speed access time. The product features an automatic power down function, which significantly reduces power consumption when the chip is deselected.
The BS62UV1027 is a high‑performance, ultra‑low‑power static RAM offering 128 K × 8 bits of storage. It operates from a low data‑retention voltage of 1.2 V and provides both C‑grade (1.8 V‑3.6 V) and I‑grade (1.9 V‑3.6 V) supply ranges, with typical standby current as low as 0.05 µA.
The device is available in several JEDEC‑standard packages such as SOP‑32, TSOP‑32, PDIP‑32 and DICE, and supports fast access times up to 85 ns. Detailed electrical characteristics, switching waveforms, and ordering information are provided for design engineers.
| Memory size | 128 K × 8 bits |
|---|---|
| Supply voltage range (C‑grade) | 1.8 V ~ 3.6 V |
| Supply voltage range (I‑grade) | 1.9 V ~ 3.6 V |
| Standby current (CMOS) | 0.05 µA typ. |
| Maximum access time | 85 ns |
| Power dissipation | 1.0 W |
| Operating temperature range | -40 °C to +85 °C |
The chip operates from 1.8 V to 3.6 V for the C‑grade version and from 1.9 V to 3.6 V for the I‑grade version.
Typical CMOS standby current is 0.05 µA.
The maximum access time is 85 ns.