Brilliance Semiconductor BS62LV1023 SRAM Datasheet

The BS62LV1023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage.


Brilliance Semiconductor BS62LV1023 SRAM Datasheet - cover page
Brand
BSI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
376 KB
Published
10 May, 2012
Updated
30 September, 2023
MD5 checksum
91CD4CCB16BB0C19A6276FAB3C5BE856

About this manual

The BS62LV1023 is a 128 K × 8‑bit static RAM offering very low power consumption and a wide operating voltage range of 2.4 V to 3.6 V. It features automatic power‑down, three‑state TTL‑compatible outputs, and can be expanded using CE1, CE2 and OE pins.

The device is supplied in multiple package styles (DICE, SOP‑32, TSOP‑32, SOJ‑32, PDIP) and is rated for industrial temperature ranges, making it suitable for a variety of embedded applications.

What's inside

  • Features
  • Description
  • Pin Configurations
  • Electrical Characteristics
  • Package Information
  • Ordering Information
  • Revision History

Specifications

Operating voltage range2.4 V ~ 3.6 V
Typical standby current0.02 µA
Maximum access time70 ns
Operating temperature range-40 °C ~ +85 °C

Frequently asked questions

What supply voltage does the BS62LV1023 require?

It operates from 2.4 V to 3.6 V.

What is the typical standby current of the device?

The typical CMOS standby current is 0.02 µA.

What is the maximum access time at 3 V operation?

The maximum access time is 70 ns.

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