Brilliance Semiconductor BS616LV8016 SRAM Datasheet

The BS616LV8016 is a 512K x 16-bit low-power CMOS SRAM. It features a 2.4V ~ 5.5V wide power range, 0.8uA typical standby current, 55ns maximum access time, and an automatic power down feature.


Brilliance Semiconductor BS616LV8016 SRAM Datasheet - cover page
Brand
BSI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
152 KB
Published
10 April, 2012
Updated
30 September, 2023
MD5 checksum
D351E03C8F3A6900D66C12F0FDC0BF82

About this manual

The BS616LV8016 is a high‑performance, very low‑power CMOS static RAM organized as 524,288 × 16 bits (512 K × 16). It operates from a wide supply range of 2.4 V to 5.5 V and offers fast access times as low as 55 ns.

The device is available in DICE and 48‑ball BGA packages, supports automatic power‑down when deselected, and provides three‑state TTL‑compatible outputs. It is qualified for industrial temperature ranges (‑40 °C to +85 °C).

What's inside

  • Features
  • Description
  • Pin Configurations
  • Absolute Maximum Ratings
  • Operating Range
  • Data Retention Characteristics
  • AC Electrical Characteristics
  • Read Cycle
  • Write Cycle
  • Ordering Information

Specifications

Memory organization524,288 × 16 bits (512 K × 16)
Supply voltage2.4 V ~ 5.5 V
Maximum access time55 ns
Package typesDICE, BGA‑48‑0912
Industrial temperature range-40 °C ~ +85 °C

Frequently asked questions

What is the operating voltage range of the BS616LV8016?

It operates from 2.4 V to 5.5 V.

What package options are offered for this SRAM?

It is offered in DICE and 48‑ball BGA packages.

What is the maximum access time of the device?

The maximum access time is 55 ns at Vcc 3.0 V–5.5 V.

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