Update: 29 September, 2023
The BS616LV1611 is a high-performance, very low power CMOS static random access memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.
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MD5 Checksum: 783D93142D5706A0350E3CEA6BF37606
Publication date: 09 May, 2012
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PDF Link: BSI BS616LV1611 Very Low Power/Voltage CMOS SRAM 1M X 16 bit PDF