The BS616LV1611 is a high-performance, very low power CMOS static random access memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.
The BS616LV1611 is a very‑low‑power CMOS static RAM organized as 1,048,576 words by 16 bits. It operates from a wide range of 2.4 V to 5.5 V supply voltage, offers selectable speed grades (55 ns or 70 ns), and includes an automatic power‑down feature when the chip is deselected.
The device is supplied in a 48‑pin BGA package (BGA‑48‑0912) and supports full static operation, three‑state TTL‑compatible outputs, and data‑retention voltage as low as 1.5 V. Electrical specifications include standby currents as low as 15 µA (typical) and a maximum power dissipation of 1.0 W. The operating temperature range spans –40 °C to +85 °C.
| Memory organization | 1,048,576 words × 16 bits |
|---|---|
| Supply voltage range | 2.4 V – 5.5 V |
| Access time (typical) | 55 ns @ 3.0 V/85 °C |
| Standby current (typical) | 15 µA |
| Package type | 48‑pin BGA (BGA‑48‑0912) |
| Operating temperature range | -40 °C to +85 °C |
| Power dissipation | 1.0 W |
| Data‑retention supply voltage | 1.5 V minimum |
The device operates from 2.4 V to 5.5 V supply voltage.
Yes, it automatically powers down when the chip is deselected, reducing power consumption.
It is supplied in a 48‑pin BGA package (BGA‑48‑0912).