The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1611 is available in 48-pin BGA package.
The document describes the BS616LV1611, a high-performance Static Random Access Memory (SRAM) organized as 1,048,576 words by 16 bits. It operates from a wide supply voltage range of 2.4V to 5.5V and features very low power consumption with typical standby currents as low as 3µA at 3.0V.
The device includes advanced features such as automatic power-down when deselected, data retention down to 1.5V, and x8/x16 configuration selectable via pins. It is available in a 48-pin BGA package and supports both commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges.
| Organization | 1M x 16 bit |
|---|---|
| Operating Voltage Range | 2.4V to 5.5V |
| Typical Standby Current (3.0V) | 3µA |
| Max Access Time (3.0V) | 55ns |
| Package Type | 48-pin BGA |
The device supports data retention with a supply voltage as low as 1.5V.
The x8/x16 configuration is selectable by the LB and UB pins.