BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV2006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2006 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 16mmx16mm TSSOP packages.
The BS62LV2006 is a 256‑K×8‑bit static RAM from Brilliance Semiconductor. It operates from 2.4 V to 5.5 V, provides very low power consumption (0.3 µA standby) and high‑speed access (55 ns typical, 70 ns max). The device includes automatic power‑down, three‑state TTL‑compatible outputs and a range of package formats.
The datasheet details pin configurations, electrical and data‑retention characteristics, switching waveforms, ordering information and mechanical dimensions for DICE, SOP‑32, TSOP‑32 and STSOP‑32 packages.
| Memory size | 256 K × 8 bit |
|---|---|
| Supply voltage | 2.4 V – 5.5 V |
| Typical standby current | 0.3 µA typ. |
| Access time | 55 ns typ., 70 ns max. |
| Power dissipation | 1.0 W |
| Data‑retention supply voltage | 1.5 V min. |
It operates from 2.4 V to 5.5 V.
The typical standby current is 0.3 µA.
Access time is 55 ns typical and 70 ns maximum.