Key facts
- Brand
- BSI
- Model
- BS62UV2006
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-04
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BSI BS62UV2006 SRAM Datasheet
The BS62UV2006 is a high‑performance, ultra‑low‑power CMOS static RAM organized as 262,144 words by 8 bits. It operates from a wide supply range of 1.8 V to 3.6 V and offers fast access times of up to 85 ns while consuming as little as 0.20 µA standby current.
The device is offered in multiple package options, including DICE, SOP‑32, small TSOP‑32 (8 mm × 13.4 mm) and standard TSOP‑32 (8 mm × 20 mm). Pin enable options (CE1, CE2, OE) allow flexible memory expansion, and an automatic power‑down feature reduces consumption when the chip is deselected.
BSI BS62UV2006 specifications
| Memory size | 262,144 words × 8 bits |
|---|---|
| Supply voltage range | 1.8 V ~ 3.6 V |
| Typical standby current | 0.20 µA (typ.) at 2.0 V |
| Maximum operating current (C‑grade, 2.0 V) | 8 mA |
| Maximum access time | 85 ns (max) |
Source: BSI BS62UV2006 SRAM Datasheet
All BSI BS62UV2006 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the standby current of the BS62UV2006?
The typical CMOS standby current is 0.20 µA at 2.0 V/25 °C.
What supply voltage range does the BS62UV2006 support?
It operates from 1.8 V to 3.6 V.
What supply voltage range does the BS62UV2006 support?
It operates from 1.8 V to 3.6 V, with a C‑grade range of 1.8 V ~ 3.6 V.
What is the typical standby current of the device?
The typical CMOS standby current is 0.20 µA at 2.0 V.