BSI BS62LV1029 128K×8‑bit SRAM Datasheet

BS62LV1029 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.


BSI BS62LV1029 128K×8‑bit SRAM Datasheet - cover page
Brand
BSI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
422 KB
Published
10 May, 2012
Updated
30 September, 2023
MD5 checksum
9A4DE4357B789125D85CF44C53EE7E2E

About this manual

The BS62LV1029 SRAM provides high‑speed access (55 ns typical, 70 ns max) while consuming very little power. It operates from 4.5 V to 5.5 V, has a typical standby current of 0.6 µA at 5 V/25 °C, and retains data down to 1.5 V supply.

The device is offered in several JEDEC‑standard packages (DICE, SOP‑32, SOJ‑32, DIP‑32, STSOP‑32, TSOP‑32). Detailed pin descriptions, electrical characteristics, switching waveforms, and ordering information are provided in the document.

What's inside

  • Features
  • Product Family
  • Pin Descriptions
  • Electrical Characteristics
  • Data Retention Characteristics
  • Switching Waveforms
  • Ordering Information
  • Package Dimensions

Specifications

Supply voltage4.5 V ~ 5.5 V
Standby current (CMOS)0.6 µA typ (5 V, 25 °C)
Access time55 ns typ, 70 ns max
Data‑retention voltage1.5 V min
Operating temperature range-40 °C ~ +85 °C

Frequently asked questions

What is the operating voltage range of the BS62LV1029?

It operates from 4.5 V to 5.5 V.

What is the typical standby current of the device?

The typical CMOS standby current is 0.6 µA at 5 V and 25 °C.

What is the maximum access time of the SRAM?

The maximum access time is 70 ns, with a typical time of 55 ns.

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