The BS616LV1615 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 15uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616LV1615 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1615 is available in 48-pin BGA package.
The document describes the BS616LV1615, a high-performance static random access memory organized as 1,048,576 words by 16 bits. It operates from a supply voltage range of 4.5V to 5.5V and features advanced CMOS technology for low power consumption with a typical standby current of 15uA at 5.0V.
| Organization | 1M x 16 bit |
|---|---|
| Package Type | 48-pin BGA |
| Operating Temperature (Commercial) | 0°C to +70°C |
| Operating Temperature (Industrial) | -40°C to +85°C |
| Maximum Access Time | 55ns |
| CMOS Standby Current (Typical) | 15uA |
The device supports a data retention supply voltage as low as 1.5V.
It has 20 address inputs (AO-A19) to select one of 1,048,576 words.
The absolute maximum rating for power dissipation is 1.0 W.