FQPF70N08 is an N-channel enhancement mode power field-effect transistor manufactured by Fairchild using Fairchild's proprietary planar stripe DMOS technology, featuring low on-state resistance, superior switching performance and high-energy pulse endurance, suitable for automotive and other low-voltage applications.
The FQPF70N08 is an 80 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low on‑resistance, low gate charge, and fast switching.
The datasheet lists key electrical ratings (80 V VDS, 43.6 A continuous drain current, 174.4 A pulsed current), thermal characteristics (RθJC 2.5 °C·W, RθJA 62.5 °C·W), and package dimensions for the TO‑220F case. Test circuits and characteristic curves illustrate switching behavior, capacitances, and diode performance.
| Drain-Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 43.6 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On‑Resistance (RDS(on)) typical | 0.0172 Ω @ VGS=10 V |
| Total Gate Charge (Qg) | 75 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 180 pF (typical) |
| Power Dissipation (PD) @ 25°C | 60 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 43.6 A continuously at a case temperature of 25 °C.
The typical total gate charge is about 75 nC.
The MOSFET is supplied in a TO‑220F package.