This document describes the features and characteristics of the FQPF6P25 250V P-Channel MOSFET produced by Fairchild Semiconductor International. These power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for high efficiency switching DC/DC converters.
The FQPF6P25 is a P‑Channel enhancement mode power MOSFET designed for high‑efficiency switching DC/DC converters. It features low gate charge, low output capacitance, fast switching, and 100 % avalanche testing.
The datasheet lists absolute maximum ratings, detailed electrical parameters such as drain‑source voltage, continuous and pulsed drain currents, gate‑source voltage, and power dissipation, as well as thermal resistance values and mechanical dimensions for the TO‑220F package.
| Drain‑Source Voltage (V_DSS) | -250 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -4.2 A |
| Pulsed Drain Current (I_D) (Note 1) | -16.8 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 45 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.78 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current at 25 °C is -4.2 A.
The single pulsed avalanche energy rating is 540 mJ.
The device is supplied in a TO‑220F package.
The gate‑source voltage may be up to +30 V.