FQPF7N10 is a 100V N-Channel MOSFET produced by Fairchild. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
The FQPF7N10 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency switching DC/DC converters, and DC motor control.
Key electrical specifications include a 100 V drain‑source breakdown voltage, 5.5 A continuous drain current at 25 °C, low typical gate charge of 5.8 nC, typical on‑resistance of 0.35 Ω (VGS=10 V), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance of 0.6 °C/W (junction‑to‑case).
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 5.5 A |
| Continuous Drain Current (I_D) at 100 °C | 3.89 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
| Gate Charge (Q_G) | 5.8 nC typ |
| Maximum Junction Temperature | 175 °C |
| Power Dissipation (P_D) at 25 °C | 23 W |
| Thermal Resistance Junction‑to‑Case | 0.6 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
The device can handle 5.5 A continuous drain current at a junction temperature of 25 °C.
The typical gate charge is 5.8 nC.
It is supplied in a TO‑220F package.
The maximum junction temperature is 175 °C.