This document describes the features and characteristics of the FQPF70N08 80V N-Channel MOSFET. These transistors are produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
The FQPF70N08 is an 80 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage automotive, DC‑DC converters and motor‑control applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220F package, along with trademark and product status information.
| Drain‑Source Voltage (V_DSS) | 80 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 43.6 A |
| Pulsed Drain Current (I_D) (Note 1) | 174.4 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
| Power Dissipation (P_D) @ 25 °C | 60 W |
| Maximum Junction Temperature (T_J) | 175 °C |
| Thermal Resistance, Junction‑to‑Case (R_JC) | 2.5 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (R_JA) | 62.5 °C·W |
| Maximum Lead Temperature for Soldering | 300 °C |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 43.6 A continuously at a case temperature of 25 °C.
The typical on‑resistance is 0.017 Ω at V_GS = 10 V.
The MOSFET is supplied in a TO‑220F package.