FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse endurance in avalanche and commutation modes. It is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
The FQPF7N10L is a logic‑level N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as high‑efficiency DC‑DC converters and DC motor control, offering low on‑state resistance and fast switching performance.
Key specifications include a 100 V drain‑source rating, 5.5 A continuous drain current at 25 °C, typical on‑resistance of 0.352 Ω at VGS=10 V, low gate charge of 4.6 nC, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and is 100 % avalanche tested.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 5.5 A |
| Gate‑Source Voltage (VGS) Rating | ±20 V |
| On‑Resistance (RDS(on)) typical | 0.352 Ω (VGS=10 V) |
| Typical Gate Charge (Qg) | 4.6 nC |
| Output Capacitance (Coss) typical | 55 pF |
| Maximum Junction Temperature (TJ) | 175 °C |
| Package Type | TO‑220F |
The device is rated for a maximum junction temperature of 175 °C.
The typical gate charge is 4.6 nC.
It is supplied in a TO‑220F surface‑mount package.
The single‑pulse avalanche energy is rated at 50 mJ.