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The FQPF7N40 is a 400 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and 100 % avalanche tested capability, making it suitable for high‑efficiency switch‑mode power supplies and lamp ballast applications.
Key specifications include a continuous drain current of 46 A at 25 °C, pulsed current rating of 184 A, on‑resistance around 0.62 Ω, and a maximum power dissipation of 42 W. The device is supplied in a TO‑220F package with thermal resistance of 2.98 °C·W (junction‑to‑case) and is rated for a gate‑source voltage of ±30 V.
| Drain‑Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 46 A |
| Pulsed Drain Current (I_DM) | 184 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 42 W |
| On‑Resistance (R_DS(on)) typical | 0.62 Ω |
| Thermal Resistance, Junction‑to‑Case | 2.98 °C·W |
| Package | TO-220F |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct up to 46 A continuously at a case temperature of 25 °C.
The MOSFET tolerates a gate‑source voltage of ±30 V.
The part is provided in a TO‑220F package.