FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using planar stripe DMOS technology, which has the characteristics of low on-state resistance, high switching speed and high surge energy. It is suitable for low voltage applications such as high efficiency DC/DC converters and DC motor control.
The FQPF7N10L is a 100 V logic N‑Channel MOSFET built with Fairchild's planar stripe DMOS technology, offering low on‑state resistance, fast switching, and high avalanche capability. It is suited for low‑voltage applications such as high‑efficiency DC‑DC converters and motor control.
Key specifications include a continuous drain current of 5.5 A at 25 °C, a pulsed drain current rating of 22 A, a typical on‑resistance of 0.352 Ω at VGS=10 V, and a total gate charge of about 6 nC. The device operates from –55 °C to +175 °C and features a maximum junction temperature of 175 °C.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 5.5 A |
| Pulsed Drain Current (I_D) @ 25 °C | 22 A |
| Gate Threshold Voltage (V_GS(th)) typical | 1.0 V |
| On‑Resistance (R_DS(on)) typical | 0.352 Ω @ V_GS=10 V |
The device is rated for a maximum drain‑source voltage of 100 V.
It can conduct up to 5.5 A continuously at a case temperature of 25 °C.