This 700V N-channel MOSFET is produced by Fairchild using its proprietary planar stripe DMOS technology. It offers superior switching performance and resistance to high energy pulses, making it well-suited for high efficiency switch mode power supplies.
The FQPF6N70 is a 700 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key specifications include a continuous drain current of 35 A at 25 °C, a pulsed drain current of 14 A, low gate charge (~30 nC), and a typical on‑resistance of about 1.16 mΩ. The device is supplied in a TO‑220F package with thermal resistance values of 2.6 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 35 A |
| Pulsed Drain Current (I_D) (Note 1) | 14 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) | 1.16 mΩ (typ) |
| Total Gate Charge (Q_g) | 30 nC (typ) |
| Reverse Transfer Capacitance (C_rss) | 15 pF (typ) |
| Power Dissipation (P_D) @ 25 °C | 48 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.6 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 700 V.
It can conduct up to 35 A continuously at a case temperature of 25 °C.
The typical total gate charge is about 30 nC.
The MOSFET is supplied in a TO‑220F package.