This product is a 450V N-Channel MOSFET with features including low on-state resistance (RDS(on) = 1.1Ω @ VGS = 10 V), low gate charge (typical 16 nC) and low Crss (typical 11 pF). It is suitable for high efficiency switch mode power supply and electronic lamp ballast based on half bridge.
The FQPF6N45 is a 450 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's DMOS planar stripe technology. It offers low on‑state resistance, low gate charge, fast switching, and robust avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies and half‑bridge lamp ballast circuits.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions for the TO‑220F package, along with trademark, disclaimer, and product status information.
| Drain‑Source Voltage (VDS) | 450 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 4.0 A |
| Continuous Drain Current (ID) @ 100 °C | 25 A |
| Pulsed Drain Current (ID,pulse) | 16 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Avalanche Energy (Eav) | 350 mJ |
| Avalanche Current (Iav) | 4.0 A |
| Power Dissipation (PD) @ 25 °C | 42 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.98 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 450 V.
The typical gate charge is 16 nC.
The on‑resistance is about 0.86 mΩ at VGS = 10 V.
It is supplied in a TO‑220F package.