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The FQPF6N50 is a 500 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies, power factor correction, and electronic lamp ballast applications. It features low gate charge (typical 17 nC), low output capacitance (typical 11 pF), fast switching, and robust avalanche capability.
Key electrical specifications include a drain‑source voltage rating of 500 V, continuous drain current of 3.6 A at 25 °C (2.3 A at 100 °C), pulsed drain current up to 144 A, and a power dissipation of 42 W. The device is supplied in a TO‑220F package with thermal resistance values of 2.98 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 3.6 A |
| Pulsed Drain Current (I_DM) | 144 A |
| Gate-Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 42 W |
| Junction-to-Case Thermal Resistance (RθJC) | 2.98 °C·W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Package | TO‑220F |
The maximum drain‑source voltage is 500 V.
It can handle a continuous drain current of 3.6 A at 25 °C.
It is supplied in a TO‑220F package.