FQPF6N80 is an 800V N-channel MOSFET produced by Fairchild Semiconductor. It has a continuous current of 3.3A and a maximum voltage of 800V. Its features are low on-state resistance, low gate charge and low Coss. The device has been tested 100% for avalanche and is suitable for high efficiency switch mode power supplies.
The FQPF6N80 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key specifications include an 800 V drain‑source rating, 3.3 A continuous drain current at 25 °C, 13.2 A pulsed current, 1.952 Ω on‑resistance at Vgs = 10 V, and typical gate charge of 31 nC. Thermal resistance is 2.45 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Package dimensions are provided for the TO‑220F case.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 3.3 A |
| Pulsed Drain Current (ID) (Note 1) | 13.2 A |
| Typical Gate Charge (Qg) | 31 nC |
| Reverse Transfer Capacitance (Crss) | 14‑18 pF |
| Power Dissipation (PD) @ 25 °C | 51 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.45 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct up to 3.3 A continuously at a case temperature of 25 °C.
The typical gate charge is 31 nC.