FQP6N60C/FQPF6N60C 600V N-Channel MOSFET is a high efficiency power field effect transistor produced by Fairchild Semiconductor Corporation. It features 5.5A of maximum continuous current, 600V of maximum drain-source voltage, 2.0Ω of typical on-state resistance, 16 nC of typical gate charge, and 7 pF of typical reverse output capacitance. This device is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
The Fairchild FQP6N60C and FQPF6N60C are 600 V N‑channel enhancement mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts.
The document provides absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical characteristic curves, test circuit diagrams, and package dimensions for the TO‑220 and TO‑220F variants.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Pulsed Drain Current | 22 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Single Pulse Avalanche Energy | 300 mJ |
| Power Dissipation (PD) @ 25 °C | 125 W |
| Thermal Resistance Junction‑to‑Case | 1.0 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
| Package Type | TO‑220 / TO‑220F |
The maximum drain‑source voltage is 600 V.
The MOSFET is available in TO‑220 and TO‑220F packages.
The typical total gate charge is 16 nC.