FQPF6N70 is a 700V N-channel MOSFET produced by Fairchild. It features a low gate charge (typical 30 nC), low Crss (typical 15 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.
The FQPF6N70 is a 700 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology, offering low on‑state resistance, low gate charge, and fast switching for high‑efficiency switch‑mode power supplies.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and package dimensions for the TO‑220F package, along with trademark and disclaimer information.
| Drain‑Source Voltage (V_DSS) | 700 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 35 A |
| Pulsed Drain Current (I_D(pulse)) | 14 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) at 25 °C | 48 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.6 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Q_g) | 30 nC |
The device is rated for a maximum drain‑source voltage of 700 V.
It can conduct up to 35 A continuously at a case temperature of 25 °C.
The typical gate charge is about 30 nC.
Junction‑to‑case is 2.6 °C·W and junction‑to‑ambient is 62.5 °C·W.