This file is an introduction to QFET, which introduces the characteristics and features of QFET
The FQPF6N50 is a 500 V N‑Channel enhancement mode power MOSFET designed with Fairchild's planar stripe DMOS technology. It offers low gate charge (typical 17 nC), low output capacitance (typical 11 pF) and fast switching performance, making it suitable for high‑efficiency switch‑mode power supplies and power factor correction circuits.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit diagrams. Package dimensions for the TO‑220F case and handling guidelines are also included, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 3.6 A |
| Pulsed Drain Current (ID) (Note 1) | 144 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 42 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.98 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
| Maximum Lead Temperature for Soldering | 300 °C (1/8" for 5 s) |
| Package Type | TO‑220F |
The FQPF6N50 is rated for a maximum drain‑source voltage of 500 V.
It can conduct up to 3.6 A continuously at 25 °C.
Typical total gate charge is 17 nC.
The device is supplied in a TO‑220F package.