FQPF7P06 is a 60V P-Channel MOSFET produced by Fairchild. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and other features.
The FQPF7P06 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC/DC converters, and portable power management.
Key features include a continuous drain current of 5.3 A at 25 °C, low gate charge (6.3 nC typical), low output capacitance, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and provides robust avalanche and dv/dt performance.
| Drain‑Source Voltage (VDS) | -60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 5.3 A |
| Gate‑Source Voltage (VGS) | +25 V |
| On‑Resistance (RDS(on)) | 0.419 Ω @ VGS = -10 V |
| Typical Gate Charge (Qg) | 6.3 nC |
| Power Dissipation (PD) at 25 °C | 24 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 6.2 °C·W |
| Operating Temperature Range | -55 °C to +175 °C |
The device is rated for a maximum drain‑source voltage of -60 V.
It can conduct up to 5.3 A continuously at a case temperature of 25 °C.
The typical gate charge is 6.3 nC.
The MOSFET can operate up to a junction temperature of 175 °C.