SAMSUNG K4S561633F - X(Z)E/N/G/C/L/F

The K4S561633F is a 268,435,456-bit synchronous high data rate Dynamic Random Access Memory organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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Brand

Samsung

File format

PDF

Published

01 April, 2012

Updated

30 September, 2023

MD5 checksum

23C8F1040AE13DDD159A5DB6E51B09C4

PDF

SAMSUNG K4S561633F - X(Z)E/N/G/C/L/F PDF