The K4S561633F is a 268,435,456-bit synchronous high data rate Dynamic Random Access Memory organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
The Samsung K4S561633F is a 4M × 16‑bit mobile SDRAM organized in four banks, supporting 3.0 V and 3.3 V supplies. It offers configurable CAS latency, burst length, and temperature‑compensated self‑refresh features for high‑performance mobile applications.
The document provides absolute maximum ratings, recommended operating conditions, timing parameters, package dimensions, and power‑up sequences, along with options for partial array self‑refresh and burst modes.
| Supply voltage (Vbb) | 2.7 V – 3.6 V (typ 3.0 V) |
|---|---|
| Maximum operating frequency | 133 MHz (CL=3) |
| Package | 54‑ball BOC, 0.8 mm ball pitch |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Refresh period | 64 ms (8K cycles) |
The device operates from 2.7 V to 3.6 V, with a typical value of 3.0 V.
CAS latency can be set to 1, 2, or 3.
The part can run up to 133 MHz when configured with CL = 3.