K5L5628JT(B)M is a 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM produced by Samsung Electronics. The operating voltage is 1.7V to 1.95V and the operating temperature is -30°C ~ 85°C.
The K5L5628JT(B)M is a Multi‑Chip Package (MCP) memory that integrates a 256 Mbit synchronous burst multi‑bank NOR Flash with a 128 Mbit synchronous burst UtRAM. It is offered in a 115‑ball FBGA package (8.0 mm × 12.0 mm) and targets mobile communication systems where low power consumption and small footprint are critical.
Key features include a wide operating temperature range (‑30 °C ~ 85 °C), multiple power‑supply options for the NOR (1.7 V‑1.95 V) and UtRAM (2.5 V‑2.7 V) sections, burst read/write capabilities up to 66 MHz, and robust block protection mechanisms. The device also provides standby power saving modes such as Partial Array Refresh and internal temperature‑compensated self‑refresh.
| Operating Temperature | -30 °C ~ 85 °C |
|---|---|
| Package Type | 115‑Ball FBGA, 8.0 mm × 12.0 mm |
| NOR Flash Supply Voltage (Read/Write) | 1.7 V – 1.95 V |
| UtRAM Supply Voltage | 2.5 V – 2.7 V |
| Burst Access Time (54 MHz) | 14.5 ns |
| Program/Erase Current | 15 mA |
| Endurance | 100 k Program/Erase cycles |
| Data Retention | 10 years |
The device operates from –30 °C to 85 °C.
The NOR Flash reads and writes at a single voltage between 1.7 V and 1.95 V.
Burst access time is 14.5 ns at 54 MHz.
The memory is rated for at least 100 k program/erase cycles.