This document describes the features and characteristics of the K4S56163LF Mobile-SDRAM, including a 2.5V power supply, LVCMOS compatible multiplexed address, four banks operation, MRS cycle, EMRS cycle, and other functions.
The K4S56163LF is a 4M × 16‑bit Mobile SDRAM organized in four banks, offering 2.5 V operation, LVCMOS compatibility, and various burst lengths and CAS latencies. It supports both commercial (‑25 °C ~ 70 °C) and extended (‑25 °C ~ 85 °C) temperature ranges and includes features such as partial array self‑refresh and internal temperature‑compensated self‑refresh.
The document details absolute maximum ratings, DC and AC operating conditions, timing parameters, pin‑out diagrams, and power‑up sequences. It also describes the package (54‑ball BOC, 0.8 mm pitch) and provides ordering information for different speed grades.
| Supply voltage (VDD) | 2.3 V – 2.7 V |
|---|---|
| Maximum operating frequency | 4105 MHz (CL = 2) |
| Refresh period | 64 ms (64K cycles) |
| Power dissipation | 1.0 W |
| Operating temperature range | Commercial: ‑25 °C – 70 °C; Extended: ‑25 °C – 85 °C |
| Package type | 54‑ball BOC, 0.8 mm pitch |
| Data width | 16 bit |
The K4S56163LF can operate up to 4105 MHz for the X(Z)E/N/G/C/LIF1H speed grade.
It supports commercial temperature (‑25 °C to 70 °C) and extended temperature (‑25 °C to 85 °C).
The device is supplied in a 54‑ball BOC package with a 0.8 mm ball pitch.
The refresh period is 64 ms (64K cycles).