The document describes the features of the K4S56163LF mobile SDRAM product from Dinghao. The product operates at a 2.5V power supply and is LVCMOS compatible with multiplexed address. It supports four banks operation and features CAS latency, burst length, and burst type settings. The product also provides special function support such as Partial Array Self Refresh and Temperature Compensated Self Refresh. It is suitable for high bandwidth, high performance memory system applications.
The Samsung K4S56163LF is a 4M × 16‑bit mobile SDRAM offered in a 54‑ball BOC package. It supports 2.5 V power supply, LVCMOS interface, and multiple operating temperature ranges, including commercial (-25 °C ~ 70 °C) and extended (-25 °C ~ 85 °C). The device provides programmable burst lengths, CAS latencies, and self‑refresh options.
The datasheet details absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, and power‑up sequence. It also includes package dimensions, pin configuration, and burst sequence examples for both 4‑ and 8‑bit bursts.
| Power supply voltage | 2.5 V |
|---|---|
| Operating temperature (commercial) | -25 °C ~ 70 °C |
| Operating temperature (extended) | -25 °C ~ 85 °C |
| Package type | 54‑ball BOC, 0.8 mm pitch |
| Maximum frequency | 4105 MHz |
| Refresh period | 64 ms |
The device requires a 2.5 V power supply.
It operates from –25 °C to 70 °C in commercial mode and –25 °C to 85 °C in extended mode.
It is supplied in a 54‑ball BOC package with a 0.8 mm ball pitch.
The part can run up to 4105 MHz.