This document introduces the features and characteristics of K4S513233F, including power supply voltage, interface compatibility, operating frequency, operating temperature, etc.
The K4S513233F-M(E)C/L/F is a 4M × 32‑bit mobile SDRAM organized in four banks, offering 3.0 V and 3.3 V operation and a range of programmable burst lengths and latencies. It is fabricated in a 90‑ball FBGA package and targets high‑bandwidth mobile applications.
The document lists electrical characteristics, absolute maximum ratings, timing parameters, and the required power‑up sequence. It also describes partial array self‑refresh options and burst sequencing for both 4‑ and 8‑word bursts.
| Capacity | 4M × 32 bit × 4 banks |
|---|---|
| Supply Voltage | 2.7 V – 3.6 V |
| Maximum Frequency | 133 MHz |
| Package | 90‑ball FBGA |
| Operating Temperature | -25 °C – 70 °C |
| Refresh Period | 64 ms |
| Input Logic High Voltage (VIH) | 2.2 V – 3.0 V |
The part is specified for up to 133 MHz operation.
It is supplied in a 90‑ball FBGA package.
The device operates from –25 °C to 70 °C.
The SDRAM uses a 64 ms refresh period.