K4S513233F - M(E)C/L/F is a mobile storage device produced by Samsung. It supports 3.0V and 3.3V power supply, LVCMOS compatible with multiplexed address, supports four banks operation, supports MRS cycle and address key programs.
The document describes the K4S513233F Mobile SDRAM, a 4‑bank, 4 M × 32‑bit device packaged in a 90‑ball FBGA. It lists features such as 3.0 V/3.3 V operation, programmable burst lengths, and partial array self‑refresh. Detailed pin‑out diagrams, package dimensions, and electrical characteristics are included.
Operating specifications cover absolute maximum ratings, recommended DC and AC conditions, timing parameters, and the required power‑up sequence. The datasheet also provides ordering information, model suffix meanings, and notes on usage restrictions.
| Supply Voltage | 3.0 V – 3.3 V |
|---|---|
| Package | 90‑ball FBGA |
| Maximum Operating Frequency | 133 MHz (CL5) |
| Operating Temperature Range | -25 °C to 70 °C (commercial) |
| Refresh Period | 64 ms (8K cycles) |
| Maximum Pin Voltage | -1.0 V to +46 V |
Pins may tolerate voltages from –1.0 V to +46 V relative to VSS.
The chip is supplied in a 90‑ball FBGA package.
Yes, it supports Full Array, 1/2 Array, and 1/4 Array self‑refresh modes.