This document is the detailed information of K4S51323LF. It introduces the features and characteristics of the product in detail.
The K4S51323LF Mobile SDRAM is a 4M × 32‑bit, four‑bank memory device offered in a 90‑ball FBGA package. It supports multiple operating modes, including normal, low‑power, and commercial‑temperature variants, and provides features such as partial array self‑refresh and temperature‑compensated self‑refresh.
The datasheet outlines absolute maximum ratings, DC and AC operating conditions, timing parameters, power‑up sequence, and burst operation details, enabling designers to integrate the part into high‑performance mobile and telecom applications.
| Memory organization | 4M × 32 bit × 4 banks |
|---|---|
| Package type | 90‑ball FBGA |
| Supply voltage (VDD/VDDOQ) | 2.5 V/2.5 V or 2.5 V/1.8 V |
| Maximum operating frequency | 133 MHz (CL=3) / 111 MHz (CL=2) |
| Refresh period | 64 ms (8K cycles) |
| Operating temperature range | -25 °C to 70 °C |
| Input leakage current | -2 µA to 2 µA |
| Clock pin capacitance | 3.0 pF to 6.0 pF |
It operates with VDD/VDDOQ of 2.5 V/2.5 V or 2.5 V/1.8 V.
The device supports up to 133 MHz with CAS latency 3, or 111 MHz with CAS latency 2.
It is rated for commercial temperature operation from –25 °C to 70 °C.
The refresh period is 64 ms, corresponding to an 8K cycle.