K4S51153LF is a mobile SDRAM with voltage options of 2.5V/2.5V or 2.5V/1.8V. It is compatible with LVCMOS and multiplexed address. The product has four banks and supports MRS and EMRS cycles with address key programs. It also has special function support including Partial Array Self Refresh and Temperature Compensated Self Refresh. Other features include masking with DQM, auto refresh, and a 64ms refresh period. The product operates in commercial temperature range (-25°C to 70°C) and comes in a 2Chips DDP 54Balls FBGA package.
The document provides a detailed description of the Samsung K4S51153LF mobile SDRAM, including its 8 M × 16‑bit organization, four‑bank architecture and supported operating modes such as PASR and internal TCSR. It lists ordering information, package dimensions (54‑ball FBGA) and key features like dual‑voltage operation (2.5 V/2.5 V or 2.5 V/1.8 V).
Electrical specifications are given with absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, and power‑up sequences. Additional sections cover partial array self‑refresh options, burst length configurations, and detailed pin functions.
| Operating voltage (VDD/VDDOQ) | 2.5 V/2.5 V or 2.5 V/1.8 V |
|---|---|
| Maximum operating frequency | 133 MHz (CL3) |
| Package type | 54‑ball FBGA |
| Power dissipation | 1.0 W |
| Number of banks | 4 |
| Refresh period | 64 ms |
The device operates at 2.5 V/2.5 V or 2.5 V/1.8 V for VDD/VDDOQ.
The SDRAM contains four banks.
The refresh period is 64 ms.