STP6NA60FP is an N-channel enhancement mode fast power MOS transistor with features such as low RDS(on), low intrinsic capacitances, minimized gate charge, and reduced threshold voltage spread. It is suitable for high current, high speed switching, switch mode power supplies, DC-AC converters, and applications in welding equipment, uninterruptible power supplies, and motor drive.
The STP6NA60FP is a high‑voltage, fast‑switching power MOSFET offered in a TO‑220FP package. It is designed for high‑current, high‑speed applications such as switch‑mode power supplies, DC‑AC converters for welding equipment, and motor‑drive circuits. The device features a low RDS(on), minimized gate charge, and rugged avalanche capability.
The datasheet lists absolute maximum ratings, detailed electrical characteristics (including drain current, gate threshold, and capacitances), thermal resistance values, and mechanical dimensions. It also includes avalanche and switching performance data, enabling designers to evaluate suitability for demanding power conversion tasks.
| Drain‑source voltage rating (VDS) | 600 V |
|---|---|
| Gate‑source voltage rating (VGS) | +30 V |
| Continuous drain current at 25 °C (ID) | 3.9 A |
| Continuous drain current at 100 °C (ID) | 2.6 A |
| Pulsed drain current (ID,pulse) | 26 A |
| Total power dissipation at 25 °C (PD) | 40 W |
| Junction‑to‑case thermal resistance (RθJC) | 3.12 °C/W |
| Junction‑to‑ambient thermal resistance (RθJA) | 62.5 °C/W |
| Gate threshold voltage (VGS(th)) | 2.25 – 3.75 V (typ.) |
| Output capacitance (Coss) | 155 – 210 pF (typ.) |
The device is rated for a maximum drain‑source voltage of 600 V.
The gate‑threshold voltage typically ranges from 2.25 V to 3.75 V.
Junction‑to‑case thermal resistance is up to 3.12 °C/W and junction‑to‑ambient is up to 62.5 °C/W.
The maximum continuous drain current at 25 °C is 3.9 A.