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The STP6N50 is a 500 V, 6 A N‑channel enhancement‑mode power MOSFET designed for high‑current, high‑speed switching. It features a maximum drain‑source voltage of 500 V, continuous drain current of 6 A at 25 °C, and a total power dissipation of 100 W under the same conditions. Avalanche capability is rated at 6 A, and the device includes typical gate threshold voltages between 2 V and 4 V.
Typical applications include switch‑mode power supplies, chopper regulators, converters, motor control, and lighting for both industrial and consumer environments. The datasheet provides detailed electrical characteristics, thermal data, switching times, and test circuit diagrams to aid designers in implementing the device safely and efficiently.
| Output Capacitance (Coss) | 140 – 190 pF |
|---|---|
| Avalanche Current (Ia) | 6 A |