The STP80N03L-06 is a high-performance N-channel enhancement mode ultra high density power MOSFET from STMicroelectronics. This device features an excellent on-resistance (RDS(on)) and high breakdown voltage, making it suitable for stable operation in high-temperature, high-voltage applications. The STP80N03L-06 is suitable for a wide range of high-frequency, high-power applications, such as motor control, DC-DC converters, and inverters.
The STP80N03L-06 is an ultra‑high‑density power MOSFET designed for high‑current, high‑speed switching applications such as motor control, DC‑DC converters, and synchronous rectification. It features avalanche‑rated capability and high dV/dt ruggedness, making it suitable for demanding power circuits.
Key specifications include a 30 V drain‑source rating, 80 A continuous drain current at 25 °C (60 A at 100 °C), 150 W total dissipation at 25 °C, and operation up to 175 °C junction temperature. Thermal resistance values are 1 °C/W (junction‑case) and 62.5 °C/W (junction‑ambient). The device is supplied in a TO‑220 package with detailed mechanical dimensions.
| Continuous Drain Current (25 °C) | 80 A |
|---|---|
| Continuous Drain Current (100 °C) | 60 A |
| Pulsed Drain Current | 320 A |
| Total Power Dissipation (25 °C) | 150 W |
| Thermal Resistance Junction‑Case | 1 °C/W |
| Thermal Resistance Junction‑Ambient | 62.5 °C/W |
| Maximum Junction Temperature | 175 °C |
| Repetitive Avalanche Current | 60 A |
| Single Pulse Avalanche Energy | 600 mJ |
It can handle up to 80 A of continuous drain current at 25 °C.