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The STP6N50 is a 500 V, 6 A N‑channel power MOSFET designed for high‑current, high‑speed switching applications such as SMPS, chopper regulators, motor control and lighting. The datasheet provides absolute maximum ratings, thermal data, avalanche characteristics and detailed electrical parameters.
Key performance figures include a 500 V drain‑source voltage, 100 W power dissipation at 25 °C, and avalanche energy up to 300 mJ. Typical switching times are in the 40‑55 ns range, and the device features low on‑resistance and fast gate charge characteristics suitable for fast switching circuits.
| Avalanche Energy (EA) single pulse | 300 mJ |
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The MOSFET can withstand a single‑pulse avalanche energy of up to 300 mJ.