stp6na60 is a mosfet from dinghao. it has low on-resistance, low gate charge and superior switching performance. it is suitable for high current, high frequency switching applications such as switch mode power supplies and inverters.
The STP6NA60 and STP6NA60FI are high‑voltage, fast‑power MOSFETs designed for high‑current, high‑speed switching applications such as SMPS, welding converters, UPS and motor drives. The device features low on‑resistance, minimized gate charge and avalanche‑tested capability.
Key specifications include a 600 V drain‑source rating, +30 V gate‑source rating, continuous drain currents of 6.5 A (STP6NA60) and 3.9 A (STP6NA60FI) at 25 °C, total dissipation up to 125 W (STP6NA60) and 45 W (STP6NA60FI), and a thermal resistance junction‑to‑case of 2.78 °C/W. Mechanical dimensions for the TO‑220 and ISOWATT220 packages are also listed.
| Drain‑source Voltage (VDS) | 600 V |
|---|---|
| Gate‑source Voltage (VGS) | +30 V |
The device is rated for a maximum drain‑source voltage of 600 V.
The gate‑source voltage is limited to +30 V.