STP80N03L-06 is a N-channel enhancement mode Ultra High Density Power MOS Transistor from Texas Instruments. Its features are typical RDS(on) is 0.005 ohms, with high voltage stress, large current capacity, wide operating temperature range and so on, which can be applied to high frequency, high power switching circuits, motor drive, DC-DC/DC-AC converters etc.
The STP80N03L-06 is an N‑channel enhancement mode power MOSFET designed for high‑current, high‑speed switching applications such as power motor control, DC‑DC & DC‑AC converters, and synchronous rectification. It features avalanche‑rated capability and high dV/dt ruggedness, making it suitable for demanding power electronics.
Key specifications include a 30 V drain‑source rating, 80 A continuous drain current at 25 °C (60 A at 100 °C), and a pulsed current capability of 320 A. The device operates up to 175 °C junction temperature and offers low on‑resistance, fast switching times, and detailed thermal resistance data for the TO‑220 package.
| Drain‑source Voltage (Vds) | 30 V |
|---|---|
| Drain‑gate Voltage (Vdg) | 30 V |
| Gate‑source Voltage (Vgs) | +15 V |
| Continuous Drain Current @ 25 °C | 80 A |
| Continuous Drain Current @ 100 °C | 60 A |
| Pulsed Drain Current | 320 A |
| Total Power Dissipation @ 25 °C | 150 W |
| Junction‑case Thermal Resistance | 1 °C/W |
| Junction‑ambient Thermal Resistance | 62.5 °C/W |
| Repetitive Avalanche Current | 60 A |
| Single Pulse Avalanche Energy | 600 mJ |
| Repetitive Avalanche Energy | 150 mJ |
| Input Capacitance (Ciss) | 6000 pF |
| Output Capacitance (Coss) | 1000 pF |
| Reverse Transfer Capacitance (Crss) | 250 pF |
| Package Dimension A (length) | 4.40 mm |
The device is rated for a maximum drain‑source voltage of 30 V.
It can conduct up to 80 A continuously at 25 °C.
The junction‑case thermal resistance is 1 °C/W and the junction‑ambient thermal resistance is 62.5 °C/W.