STP80N05-09 is a N-channel enhancement mode ultra-high density power MOS transistor from Dinghao. It has a typical RDS(on) of 7 mΩ, avalanche rugged technology, low gate charge, high current capability and a working temperature of 175 °C. It is used in synchronous rectifiers, high current, high speed switching and DC-DC&DC-AC converters.
The STP80N05‑09 is an ultra‑high density power MOSFET featuring low gate charge, high current capability (80 A continuous) and an operating junction temperature up to 175 °C. It is designed for synchronous rectifiers, high‑speed switching and DC‑DC/AC converter applications.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal resistance values, capacitances, switching times and mechanical dimensions for the TO‑220 package, along with derating curves and safe‑operating‑area graphs.
| Drain‑source Voltage (VDS) | 50 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 80 A |
| Total Power Dissipation @ 25 °C | 150 W |
| Maximum Junction Temperature (Tj) | 175 °C |
| Thermal Resistance Junction‑ambient (RθJA) | 62.5 °C/W |
| Output Capacitance (Coss) | 900 pF |
The device can handle a continuous drain current of 80 A at 25 °C.
The maximum operating junction temperature is 175 °C.
It is supplied in a TO‑220 package.
The device is rated for a drain‑source voltage of 50 V.