The STP6LNC60 is a 600V, 1 Ohm Ron, 5.8A N-channel PowerMesh™II MOSFET with extremely high dv/dt capability, 100% avalanche tested, a new high voltage benchmark, and minimized gate charge.
The STP6LNC60 and STP6LNC60FP are N‑channel MOSFETs rated for 600 V drain‑source voltage and up to 5.8 A continuous drain current. The datasheet provides absolute maximum ratings, thermal specifications, switching parameters and mechanical dimensions for both the TO‑220 and TO‑220FP packages.
Key application areas include high‑current, high‑speed switching such as SMPS, DC‑AC converters for welding equipment, UPS, and motor drives. Detailed test circuit diagrams illustrate inductive load switching, gate‑charge measurement and diode recovery characteristics.
| Drain‑source Voltage (VDS) | 600 V |
|---|---|
| Pulsed Drain Current (ID,pulse) | 23.2 A |
| Avalanche Current (IAval) | 5.8 A |
The MOSFETs are rated for a maximum drain‑source voltage of 600 V.