This datasheet provides information on the specifications, characteristics and usage recommendations for MGFS52BN2122A products.
The MGFS52BN2122A is a 160 W push‑pull GaAs power FET designed for use in 2.1‑2.2 GHz band amplifiers such as W‑CDMA base‑station power amplifiers. It features a hermetically sealed metal‑ceramic package, high linear power gain (≈12 dB), and a power‑added efficiency of about 48 % at 2.17 GHz.
The datasheet also includes safety and reliability notes, specifying absolute maximum ratings (Ta = 250 °C), recommended bias conditions (VDS = 12 V, ID = 4 A), and handling precautions for the semiconductor device.
| Frequency band | 2.1‑2.2 GHz |
|---|---|
| Typical output power (Pout) | 160 W (typ.) @ 2.17 GHz |
| Linear power gain (GLP) | 12.0 dB (typ.) @ 2.17 GHz |
| Power‑added efficiency (PAE) | 48 % (typ.) @ 2.17 GHz |
| Gate‑to‑drain breakdown voltage (VGD) | -20 V |
| Gate‑to‑source breakdown voltage (VGS) | -10 V |
| Total power dissipation (PT) | 1875 W |
| Maximum operating temperature | 250 °C |
| Recommended bias – VDS | 12 V |
The typical output power is 160 W at 2.17 GHz.
A drain‑source voltage of 12 V and a drain current of 4.0 A are recommended.
The device can operate up to an ambient temperature of 250 °C.