MGF1601B is a N-channel Schottky gate medium-power GaAs FET designed for use in S to X band amplifiers and oscillators. The device features high linear power gain and high P1dB, and is suitable for microstrip circuits.
The MGF1601B is a medium‑power GaAs FET designed for S‑to‑X band amplifiers and oscillators. It features a hermetically sealed metal‑ceramic package with low parasitic losses, suitable for microstrip circuit implementations.
The document provides detailed electrical characteristics, recommended bias conditions, absolute maximum ratings, typical performance curves, and S‑parameter data, along with safety and legal notices for proper use.