The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFS44V2735 is an internally impedance‑matched GaAs power FET designed for 2.7‑3.5 GHz band amplifiers. Its hermetically sealed metal‑ceramic package provides high reliability for power‑amplifier and digital‑radio applications.
Typical performance includes 24 W output power, 12 dB linear gain, 36 % power‑added efficiency and low distortion (IM3 ≈ ‑45 dB). Recommended bias is Vgs = 10 V, Id = 6.4 A with a 25 Ω gate resistor, and the device’s absolute maximum ratings are 15 V gate‑drain breakdown and 20 A drain current.
| Frequency band | 2.7‑3.5 GHz |
|---|---|
| Typical output power | 24 W |
| Linear power gain (GLP) | 12.0 dB |
| Power added efficiency (PAE) | 36 % |
| Third‑order intermodulation (IM3) | -45 dB |
| Gate‑to‑drain breakdown voltage | 15 V |
| Gate‑to‑source breakdown voltage | -45 V |
| Total power dissipation | 125 W |
| Thermal resistance | 1.2 °C/W |
The device delivers a typical output power of 24 W.
The absolute maximum drain current is 20 A.
The document advises to keep safety first, use non‑flammable materials and proper circuit placement.