This datasheet lists the parameters of MGFS45V2123A. MGFS45V2123A is an internally matched GaAs power FET especially designed for use in 2.1-2.3 GHz band amplifiers.
The MGFS45V2123A is an internally impedance‑matched GaAs power FET designed for 2.1‑2.3 GHz band amplifiers. It offers a typical output power of 32 W, a linear gain of about 12 dB, and a power‑added efficiency of 45 % in a hermetically sealed metal‑ceramic package.
Mitsubishi Electric emphasizes safety in circuit designs, recommending non‑flammable materials, proper placement of auxiliary circuits, and adherence to bias conditions (VDS = 10 V, ID = 6.5 A, RG = 25 Ω). The document also includes absolute maximum ratings, electrical characteristics, and export control notices.
| Frequency Band | 2.1‑2.3 GHz |
|---|---|
| Typical Output Power | 32 W |
| Typical Power Gain | 12.0 dB |
| Typical Power Added Efficiency | 45 % |
| Maximum Drain Current (ID) | 22 A |
| Gate‑to‑Drain Breakdown Voltage (VGD0) | -15 V |
| Gate‑to‑Source Breakdown Voltage (VGS0) | -15 V |
| Total Power Dissipation (PT) | 100 W |
| Storage Temperature Range | -65 °C to +175 °C |
The typical output power is 32 W when operated at 2.1‑2.3 GHz.
Recommended bias is VDS = 10 V, ID = 6.5 A, and RG = 25 Ω.
The absolute maximum drain current rating is 22 A.