The MGFL48V1920 is a 60W push-pull type GaAs power FET designed for use in 1.9-2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFL48V1920 is a GaAs power FET designed for 1.9‑2.0 GHz band amplifiers. It features a push‑pull configuration, 60 W typical output power, 11.5 dB typical gain and 45 % typical power‑added efficiency. The device is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Recommended bias conditions are VDS = 12 V, ID = 4.0 A with a 20 Ω gate resistance. Electrical characteristics include a total power dissipation of 10 W, storage temperature range –65 °C to +175 °C and a junction temperature limit of 175 °C. Safety warnings stress proper circuit design, use of non‑flammable materials and precaution against malfunction.
| Frequency band | 1.9 – 2.0 GHz |
|---|---|
| Typical output power | 60 W |
| Typical power‑added efficiency | 45 % |
| Typical linear power gain | 11.5 dB |
| Gate resistance (RG) | 20 Ω |
| Total power dissipation | 10 W |
| Storage temperature range | -65 °C to +175 °C |
| Maximum junction temperature | 175 °C |
The MGFL48V1920 delivers a typical output power of 60 W in the 1.9‑2.0 GHz band.
Recommended bias is VDS = 12 V, drain current ID = 4.0 A, with a 20 Ω gate resistance for each gate.
It is intended for use in the 1.9 GHz to 2.0 GHz frequency band.