This document describes the MGF0917A GaAs FET, which is a high-power gain stage amplifier designed for UHF band amplifiers. It features high output power, high power gain, and high power added efficiency.
The MGF0917A is a high‑power GaAs FET designed for use in UHF‑band power amplifiers. It features an N‑channel Schottky gate, a hermetic package, and is supplied as a non‑matched SMD device.
Key specifications include a typical output power of 24 dBm at 1.9 GHz, a gain of 21 dB, and a power‑added efficiency of 38 %. The sheet also lists absolute maximum ratings, recommended bias conditions, S‑parameters, and safety/legal notices for designers.
| Typical Output Power (Po) | 24 dBm @ 1.9 GHz |
|---|---|
| Typical Gain (Gp) | 21 dB @ 1.9 GHz |
| Typical Power‑Added Efficiency (nadd) | 38 % @ 1.9 GHz, Pin=4 dBm |
| Gate‑to‑Source Breakdown Voltage (VGS0) | -15 V |
| Drain Current (ID) | 200 mA |
| Total Power Dissipation (PT) | 2 W |
| Noise Figure (NF) | 0.9 dB |
The device’s maximum drain current is rated at 200 mA.
Typical output power is 24 dBm when operated at 1.9 GHz.