The MGFS48B2122 is a 60W push-pull type GaAs power FET specially designed for use in 2.11-2.17GHz band amplifiers. The product has high output power, high power gain and high power added efficiency, and can be used for W-CDMA base station's 2.11-2.17GHz band power amplifier.
The MGFS48B2122 is a hermetically sealed, metal‑ceramic GaAs power FET designed for use in 2.11‑2.17 GHz band power amplifiers, such as W‑CDMA base‑station transmitters. It features a push‑pull configuration with high output power and efficiency.
Key specifications include a typical output power of 60 W at 2.17 GHz, linear power gain of 12 dB, and power‑added efficiency of 48 %. Recommended bias conditions are VDS = 12 V, ID = 2.0 A, and gate resistance of 250 Ω per gate. The device’s absolute maximum ratings and safety guidelines are detailed to ensure reliable operation.
| Frequency band | 2.11 – 2.17 GHz |
|---|---|
| Typical output power (Pout) | 60 W @ 2.17 GHz |
| Linear power gain (GLP) | 12 dB @ 2.17 GHz |
| Power‑added efficiency (PAE) | 48 % @ 2.17 GHz |
| Recommended VDS | 12 V |
| Gate resistance (RG) | 250 Ω per gate |
| Total power dissipation (PT) | 125 W |
| Thermal resistance (Rth ch‑c) | ≈1.2 °C/W |
| Gate‑to‑drain breakdown voltage (V_GDO) | -20 V |
| Gate‑to‑source breakdown voltage (V_GSO) | -10 V |
The device delivers a typical output power of 60 W at 2.17 GHz.
The linear power gain is typically 12 dB at 2.17 GHz.
Users should keep safety first, use non‑flammable materials, and follow recommended bias and thermal limits to avoid injury or fire.