MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5-2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFS45A2527B is a hermetically sealed, metal‑ceramic GaAs power FET designed for use in 2.5‑2.7 GHz band amplifiers and digital radio communication systems. It features internal 50 Ω matching, high output power, and high power gain, making it suitable for high‑performance RF applications.
Key specifications include a typical output power of 32 W, linear power gain of 12 dB, and power‑added efficiency of 40 % at the specified frequency range. The device is rated for a drain current of 7.5 A and a total power dissipation of 107 W, with safety guidelines emphasizing proper circuit design and handling.
| Frequency band | 2.5 – 2.7 GHz |
|---|---|
| Typical output power | 32 W |
| Linear power gain (GLP) | 12.0 dB |
| Power‑added efficiency (PAE) | 40 % |
| Drain current (ID) | 7.5 A |
| Total power dissipation (PT*1) | 107 W |
It operates in the 2.5 – 2.7 GHz band.
The typical output power is 32 W.
The typical PAE is 40 %.