MGFS45B2527B is a 2.5 - 2.7 GHz band 30W power GaAs FET with internally matched impedance. It features Class AB operation, internal 50(ohm) system matching, high output power, high power gain, and low distortion.
The MGFS45B2527B is an internally impedance‑matched GaAs power FET designed for 2.5‑2.7 GHz band amplifiers, offering up to 30 W typical output power and a typical gain of 12.5 dB. The hermetically sealed metal‑ceramic package provides high reliability for demanding RF applications.
The document lists electrical characteristics, recommended bias conditions (VDS = 12 V, ID = 0.9 A, RG = 10 Ω), and safety guidelines emphasizing proper circuit design, use of non‑flammable materials, and compliance with export control regulations.